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Works by R. W. Bicknell
6 found
Order:
- Growth mechanism and defect structures in epitaxial silicon.J. M. Charig, B. A. Joyce, D. J. Stirland & R. W. Bicknell - 1962 - Philosophical Magazine 7 (83):1847-1860.No categories
- A study of 2 MeV helium-irradiated phosphorus-diffused silicon.C. R. Allen & R. W. Bicknell - 1974 - Philosophical Magazine 30 (3):483-500.No categories
- The annealing characteristics of phosphorous implanted silicon. I.R. W. Bicknell - 1972 - Philosophical Magazine 26 (2):273-286.No categories
- The annealing characteristics of phosphorus-implanted silicon Part II.R. W. Bicknell - 1972 - Philosophical Magazine 26 (4):911-927.No categories
- The epitaxial deposition of silicon on quartz.R. W. Bicknell, J. M. Charig, B. A. Joyce & D. J. Stirland - 1964 - Philosophical Magazine 9 (102):965-978.
- The epitaxy of silicon on alumina—structural effects.R. W. Bicknell, B. A. Joyce, J. H. Neave & G. V. Smith - 1966 - Philosophical Magazine 14 (127):31-46.No categories
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